Study on the Effect of ESD and EMP Radiation Damage on Microwave Semiconductor DevicesLiu Hongbing, Wang Changhe, Zhao Tong, Li Yongbing, Yang Jie 1. The 13^th Researek Institute, CETC , Shijiazhuang 050051, China ; 2. Ordnance Engineering Collage of PLA, Shijiazhnang 050003, ChinaAbstract:Damages caused by ESD or EMP on microwave semiconductor devices were discussed, and their main failure model and mechanisms were analyzed. The experimental and analysis results show that current amplification factor hFE is a more sensitive parameter of ESD or EMP; effeeted by ESD or EMP, the device will break into avalanche breakdown, which sequentially incite the injection effect of hot electron and finally result in degeneration of hFE; it is proved that BC junction is easier to be damaged than EB junction by ESD or EMP in experiments, because the failure energy of BC junction is less than that of EB while in state of reverse-bias; the ability of anti-EMP can be improved through reforming the design of electronic device which may increase the failune energy of ESD and EMP.[著者文摘]
